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The ICON employs contact and non-contact scanning modes as well as a third technique developed by Bruker called “ScanAsyst” which applies a force curve at each pixel in order to obtain a hardness map of the surface.  Most importantly, this method auto images, allowing a user to only set the size and location in order to get publishable images.

These AFM methods can be coupled with other techniques to measure topography in liquids, force spectroscopy, electrical and other properties of thin films.

Standard ETD in-chamber SE detector, T1 BSE detector and T2 in-column SE detector. Optionally equipped with immersion mode and T3 in-column SE detector, retractable directional back-scatter detector (DBS) with concentric and angular diode arrangements (available up to 50Pa chamber pressure), and sTEM 3+ transmission electron detector with concentric diodes for HAADF, BF, and custom DF imaging. Sample stage tilts to 90-deg. Variable pressure sample chamber can maintain 10-500 Pa water-vapor environment or high vacuum (10e-4 Pa). Has Maps4 automated large area mapping software. Equipped with Oxford Symmetry (EBSD) with EDS.

MicroCal cap DSC liquid samples only volumes 400uL

Equipped with a field-emission SEM column (res~4nm) and a gallium focused ion beam (FIB). Detectors include Through Lens Detector (TLD), sTEM, and Continuous Dynode Electron Multiplier (CDEM) for secondary electron, backscattered electron, and secondary ion imaging. A stationary microprobe is available in the chamber for extraction of TEM lamella from wafer substrates. Beam chemistries include enhanced Si/SiOx etch and site specific platinum deposition.

EBSD pixel resolution up to 1244x1024 and 4000+ fps indexed. Used for crystal orientation mapping, sample texture analysis, characterization of grain boundaries, elemental analysis, and phase discrimination. Equipped with automated Large Area Mapping, Transmission Kikuchi Diffraction (TKD) and capable of capturing EBSPs with Megapixel resolution.

Demonstrated better than 125eV resolution at Mn-Ka. Aztec 3.2 with TrueLine, TrueMap, QuantLine, and automatic element deconvolution. Post-processing features are additionally available on the G44 analysis computer.

Demonstrated better than 127eV resolution at Mn-Ka. Aztec 3.2 with TrueLine, TrueMap, QuantLine, and automatic element deconvolution. Post-processing features are additionally available on the G44 analysis computer.

Test hardness, modulus of elasticity, residual stress, time-dependent creep and relaxation, fracture toughness and fatigue on thinfilms without removing the substrate. Max load 500mN.

The SIMS process is initiated by bombarding the surface of a solid sample with an energetic beam of ions (1-50 keV). This primary ion beam bombardment results in the ejection of atoms and molecular fragments from the surface region. Only a small percentage of the emitted fragments are positive or negative ions. It is these secondary ions that are mass analyzed in SIMS. In static mode of ToF SIMS, the primary ion beam is maintained at a very low fluence (typically less than 10¹² ions/cm²) so that secondary ions are not emitted from an area damaged previously by another primary ion, resulting in the emission of molecular fragments from organic and biological materials. The structure and composition of these fragments is directly related to the molecular structure of the surface they were emitted from. Thus, analysis of the type and amounts of secondary ions emitted from a sample under static SIMS conditions provides information about the molecular surface structure of organic and biological materials. When used in conjunction with other surface sensitive techniques such as electron spectroscopy for chemical analysis (ESCA), a detailed understanding of surface structure and composition can be obtained.

A key feature of modern, state-of-the-art SIMS systems is the ToF analyzer used to detect the secondary ions. The ions are extracted from the sample and accelerated into the field-free analyzer with a common energy (but different velocities). The difference in velocities means the smaller ions move through the analyzer more rapidly than the larger ions, providing mass separation of the ions. When the secondary ions strike the detector their masses are determined from the time it took them to travel through the analyzer. Overall, the combination of the ToF analyzer with the static SIMS process results in a powerful surface analysis technique.

ToF-SIMS Capabilities:

• A mass spectrum of the outermost 15Å of a surface
• Identification of structural units present at the surface, e.g. monomeric components and repeat units)
• Fingerprint identification of polymers
• Information on surface degradation and contamination
• Spatial imaging of the surface chemistry

Information provided by ToF-SIMS:

• Molecular conformation
• Molecular orientation
• Molecular mobility
• Sample damage
• Extent of crosslinking
• Molecular interactions
• Assembly orientation and perfection
• Quantitation

ToF-SIMS Applications:

• Detection of contaminants
• Identification of surface-active additives
• Characterization of surface modification treatments
• Examination of adsorbed/immobilized biomolecules
• Determination of supramolecular structures
• Chemical imaging of patterned surfaces

Special ToF-SIMS capabilities at our facility:

• Frozen-hydrated analysis (“cold stage”)
• Multiple sample handling
• Depth profiles of organic materials
• Variable temperature analysis

The instrument is equipped with a monochromatic Al Kα x-ray source as well as non-monochromatic Al and Mg sources. Typically a 700x300 micron spot on the sample is analyzed, but the spot sizes can be decreased down to ~100 microns. Samples up to 1 x 9 cm can be measured. Special capabilities of the Kratos Axis Ultra DLD include ultraviolet photoelectron spectroscopy (UPS), XPS imaging, depth profiling using monoatomic argon, and non-destructive depth profiling of the outer 10 nm using angle-resolved XPS

Laser sources include 514 nm and 784 nm. Automated sample stage. CCD detection. 

Equipped with 2 source heads: sputter and carbon thread. The default sputter target is platinum, but iridium is also available. Three sample stages are available to users: pin-mount stubs, glass slide, and a planetary drive stage. Stage is motorized in Z, Tilt, and Rotation. Quartz monitor reports film thickness after recipe completion.

The Sirion XL30 scanning electron microscope provides high resolution, low kV secondary electron and backscatter imaging from well-prepared samples using through-lens-detection technology. For standard gold on carbon substrate resolution is 3 nm at accelerating voltages of 1 kV - 30 kV.

A 532 nm visible beam is generated by frequency doubling of a short-pulsed Nd:YAG laser (32 ps pulse width and 50 Hz repetition rate), which also functions as the pump for an OPG/OPA/DFG system that generates a tunable IR beam (extended to ~1000 wavenumbers). 

Sample holder supports up to 78 sample/reagent vials. Analysis time per sample is typically 2-15 minutes. Analysis temperature ranges from 4-45 °C. System includes 4 separate flow cells.

The S-Probe is equipped with a monochromatic Al Kα x-ray source. The typical x-ray spot size used for analysis is 800 microns, but smaller spot size analysis is possible down to 50 microns. Samples up to 3x3 cm can be measured.

Contact Ellen Lavoie at lavoie@uw.edu for training or questions.

The output of the Libra (800 nm, 1 kHz, 40 fs) has the capability to pump 1 or 2 OPAs with outputs ranging from the UV to IR, as well as generate a broadband probe from the UV to NIR. The Helios system allows for transient absorption detection in the fs-ns range, while the EOS system extends from the ns-ms range. Streak camera allows for detection of photoluminescence in the ps-ms time range.